High Purity SiC Materials for High-temperature & LPCVD Processes
Asahi Glass offers a full line of high-purity recrystallized & CVD-Coated SiC furnace components for Vertical, Horizontal and Single Wafer processes.
Asahi Glass SiC materials are preferred worldwide by furnace manufacturers and wafer fabs whose processes demand the use of high-purity precision components.
With ppb purity levels and a melting point of >1400(deg), Asahi Glass CVD-Coated SiC is the material of choice for High-Temperature and LPCVD processes. Asahi Glass SiC is virtually impervious to acid etc, resulting in consistent and repeatable performance time after time.
Asahi Glass SiC materials are available in 150mm - 300mm for all major horizontal and vertical systems.

High Purity SiC Components for 300mm
High Purity SiC Components for 300mm
With in-house custom design capabilities and state-of-the-art process control, our design teams have led the industry with a full line of leading-edge of 300mm products for both high-temperature and LPCVD processes. Asahi Glass works hand-in-hand with wafer fabs around the world to fine-tune their 300mm processes and ensure consistent high purity performance products which maximize yield and throughput.
Dummy Wafers
Dummy Wafers
Asahi Glass Dummy Wafers are high purity, 100% SiC-CVD material, formed by an advanced CVD process. The exceptional material properties of these advanced wafers offer a reusable, cost effective alternative to silicon wafers when used as dummy or "filler" wafers. Asahi Glass dummy wafers are available in 150mm - 300mm.


Impurity Concentration (Unit:ppm)
Element
Roiceram HS-U
non-coated
Roiceram HS-U
SiC-CVD coated
Quartz
Fe
3
0.020
0.1-0.8
Al
10
0.010
8-28
Ni
1
0.004
0.05
Ca
3
0.015
0.2-1.0
Cu
<1
0.008
0.005-0.1
Na
<1
0.004
0.2-2.0
Ti
1
0.003
0.3-2.0
Strength and Softening point
 
Roiceram HS-U
non-coated
Quartz
Unit
Strength
33000
6200
PSI
230
42
MPa
23
4.3
kgf/mm2
Softening
point
>1400
1070


Comparison of Acid Inertness
Comparison of Acid Inertness

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